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  • 专利标题:   Preparation of graphene insulation for metal substrate comprises heating graphene sample, depositing silicon on graphene surface and cooling.
  • 专利号:   CN105986226-A, CN105986226-B
  • 发明人:   ZHANG Y, WANG Y, GAO H
  • 专利权人:   CHINESE ACAD SCI PHYSICS INST, CHINESE ACAD SCI PHYSICS INST
  • 国际专利分类:   C23C014/06, C23C014/22
  • 专利详细信息:   CN105986226-A 05 Oct 2016 C23C-014/06 201677 Pages: 8 Chinese
  • 申请详细信息:   CN105986226-A CN10081215 15 Feb 2015
  • 优先权号:   CN10081215

▎ 摘　　要

NOVELTY - Preparation of graphene insulation comprises heating graphene sample, depositing silicon on the graphene surface and cooling. USE - Preparation of graphene insulation for metal substrate. ADVANTAGE - Annealing is at high temperature and simultaneous with deposition of silicon, thus improving the quality of graphene.