▎ 摘　　要

NOVELTY - The method involves forming a graphene transparent conductive film on an upper part of a metal substrate to form a substrate. A silicon dioxide substrate and a silicon substrate are formed with the graphene transparent conductive film. The metal substrate is etched to obtain a silicon dioxide substrate based the graphene transparent conductive film. A silica sol layer is formed with a silicon dioxide sol layer that is fixed on a surface of the graphene transparent conductive thin film. A surface layer of the substrate is used to perform a drying process. USE - Silicon dioxide substrate based graphene transparent conductive film manufacturing method. ADVANTAGE - The method enables forming a graphene transparent conductive thin film by using a silicon substrate so as to avoid graphene transfer difficulty and conveniently manufacture the graphene transparent conductive film based on a silicon dioxide substrate, thus reducing cost. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a silicon dioxide substrate based graphene transparent conductive film manufacturing method.'(Drawing includes non-English language text)'