▎ 摘　　要

NOVELTY - The method involves preparing a coating solution based on graphene oxide (S110). The coating solution is prepared by mixing a graphene oxide solution in which the graphene oxide is dispersed in deionized water and an alcohol solution at a predetermined ratio. The coating solution is coated on a substrate to form a graphene oxide thin film (S120) on the substrate. The graphene oxide thin film having insulating properties is converted into a graphene semiconductor thin film (S130) by photo-sintering the graphene oxide thin film through ultra-short white light. USE - Method for manufacturing electronic devices (claimed), such as nonvolatile flexible memory devices. ADVANTAGE - The method uses graphene having mechanically flexible properties to produce a graphene-based nonvolatile flexible memory device capable of bending and folding. The method is easy to mass-produce due to a fast process time. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows the flowchart of a method of manufacturing an electronic device. (Drawing includes non-English language text). Prepare coating solution based on graphene oxide (S110) Form graphene oxide thin film (S120) Form graphene semiconductor thin film (S130) Electrode formation (S140)