• 专利标题:   Preparation of graphene/carbon nanotube composite film for thin film transistor arrays, involves sequentially depositing graphene film and carbon nanotube film on metal substrate, removing substrate using removal agent, and cleaning.
  • 专利号:   CN112537769-A
  • 发明人:   XIA Y, ZHUO E, YUAN H
  • 专利权人:   BEIHAI HUIKE PHOTOELECTRIC TECHNOLOGY CO, HKC CO LTD
  • 国际专利分类:   C01B032/16, C01B032/184, H01L027/12
  • 专利详细信息:   CN112537769-A 23 Mar 2021 C01B-032/184 202135 Pages: 12 Chinese
  • 申请详细信息:   CN112537769-A CN11393348 02 Dec 2020
  • 优先权号:   CN11393348

▎ 摘  要

NOVELTY - Preparation of graphene/carbon nanotube composite film, involves electrochemically depositing a graphene film on the surface of a metal substrate, depositing a carbon nanotube film on the surface of graphene film by atomic layer deposition, removing the metal substrate using a removal agent, and cleaning. USE - Preparation of graphene/carbon nanotube composite film for thin film transistor arrays (all claimed). ADVANTAGE - The method forms composite films having high charge mobility, conductivity, and light transmittance, and excellent chemical stability and mechanical performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for thin film transistor array comprising a substrate and a gate metal layer, a gate insulating layer, an amorphous silicon active layer, an ohmic contact layer, and a source/drain metal layer sequentially formed on the surface of a substrate, a passivation layer, and the graphene/carbon nanotube composite film layer, which at least partially passes through the passivation layer and is connected with the source-drain metal layer.