• 专利标题:   Silicon negative electrode for lithium ion battery, has silicon negative electrode mixture layer that is positioned on negative electrode current collector, where buffer layer is located on silicon anode mixture layer.
  • 专利号:   KR2022134203-A
  • 发明人:   KIM H J, KIM J H, KIM W, PARK H, SEO S H, SONG H K
  • 专利权人:   GWANGJU INST SCI TECHNOLOGY
  • 国际专利分类:   H01M010/052, H01M004/02, H01M004/04, H01M004/134, H01M004/1395, H01M004/38, H01M004/62
  • 专利详细信息:   KR2022134203-A 05 Oct 2022 H01M-004/134 202293 Pages: 15
  • 申请详细信息:   KR2022134203-A KR039560 26 Mar 2021
  • 优先权号:   KR039560

▎ 摘  要

NOVELTY - The electrode has a silicon negative electrode mixture layer that is positioned on a negative electrode current collector (100). A buffer layer (300) is positioned on the silicon anode mixture layer (200). An anti-expansion layer (400) is formed on the buffer layer to suppress expansion of silicon. The buffer layer comprises a first buffer layer (310) and a second buffer layer (320). The first and second buffer layers are made of graphene oxide. The expansion prevention layer is made of metal oxide that is selected from zinc oxide, aluminum zinc oxide, magnesium gallium zinc oxide or gallium oxide. USE - Silicon negative electrode for lithium ion battery. ADVANTAGE - The silicon negative electrode has improved lifespan and charge and discharge rate by suppressing volume expansion of silicon negative electrodes occurring during repeated charging and discharging. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing silicon negative electrode for lithium ion battery. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the silicon negative electrode. (Drawing includes non-English language text) 100Negative electrode current collector 200Silicon anode mixture layer 300Buffer layer 310First buffer layer 320Second buffer layer 400Anti-expansion layer