• 专利标题:   Substrate for forming semiconductor device, comprises graphene layer arranged on silicon surface of silicon carbide crystal substrate, epitaxial growth layer, and graphene layer arranged on silicon surface of epitaxial growth layer.
  • 专利号:   WO2022123872-A1
  • 发明人:   NORIYUKI M, TAKUJI M, MITSURU M, TAKAYASU O
  • 专利权人:   ROHM CO LTD
  • 国际专利分类:   C23C016/02, C23C016/42, C30B025/20, C30B029/36, H01L021/20, H01L021/205
  • 专利详细信息:   WO2022123872-A1 16 Jun 2022 H01L-021/20 202251 Pages: 50 Japanese
  • 申请详细信息:   WO2022123872-A1 WOJP036388 01 Oct 2021
  • 优先权号:   JP205046

▎ 摘  要

NOVELTY - A semiconductor substrate comprises a silicon carbide single crystal substrate (10SB), a graphene layer (11GR1) arranged on a silicon surface of the crystal substrate, an epitaxial growth layer (12RE) formed above the crystal substrate through the layer (11GR1), and a graphene layer (11GR2) arranged on a silicon surface (S) of the epitaxial growth layer. USE - Semiconductor substrate for forming silicon carbide-based semiconductor devices. Uses include but are not limited to Schottky barrier diode (SBD) module, MOSFET, insulated gate bipolar transistor (IGBT) module, metal oxide semiconductor (MOS) module, power modules for inverter circuits, power sources for hybrid vehicles, trains, industrial robots, solar cells, wind generators, etc. ADVANTAGE - The semiconductor substrate has improved productivity, reliability and mass productivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of semiconductor substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of semiconductor substrate. Silicon carbide single crystal substrate (10SB) Graphene layer (11GR1,11GR2) Epitaxial growth layer (12RE) Carbon surface (C) Silicon surface (S)