▎ 摘　　要

NOVELTY - A semiconductor substrate comprises a silicon carbide single crystal substrate (10SB), a graphene layer (11GR1) arranged on a silicon surface of the crystal substrate, an epitaxial growth layer (12RE) formed above the crystal substrate through the layer (11GR1), and a graphene layer (11GR2) arranged on a silicon surface (S) of the epitaxial growth layer. USE - Semiconductor substrate for forming silicon carbide-based semiconductor devices. Uses include but are not limited to Schottky barrier diode (SBD) module, MOSFET, insulated gate bipolar transistor (IGBT) module, metal oxide semiconductor (MOS) module, power modules for inverter circuits, power sources for hybrid vehicles, trains, industrial robots, solar cells, wind generators, etc. ADVANTAGE - The semiconductor substrate has improved productivity, reliability and mass productivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of semiconductor substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of semiconductor substrate. Silicon carbide single crystal substrate (10SB) Graphene layer (11GR1,11GR2) Epitaxial growth layer (12RE) Carbon surface (C) Silicon surface (S)