▎ 摘　　要

NOVELTY - The memory has a medium isolating layer arranged between data electrodes and addressing electrodes. A paired electrode is arranged on the medium isolating layer and is electrically connected with the data electrodes and the addressing electrodes respectively. A graphene slice layer is covered on the surface of the paired electrode for connecting the two electrodes of the paired electrode. The data electrodes are arranged on the substrate and are arranged in parallel manner. USE - Programmable non-volatile resistive memory. ADVANTAGE - The memory is simple in structure, the memory is prepared based on a traditional semiconductor plane preparing technique, so that the memory can satisfy the requirements of large-scale industrialized production. The memory is low in manufacturing cost and large in memorizing density. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method for a programmable non-volatile resistive memory. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a programmable non-volatile resistive memory.