▎ 摘　　要

NOVELTY - Inverted multi-junction solar cell comprises a gallium arsenide (GaAs) substrate, whose upper surface is orderly provided with an aluminum arsenide (AlAs) peeling layer, a gallium indium phosphide (GaInP) sub-cell, a graphene/aluminum antimony phosphide (AlSbP) multi-layer structure buffer layer, a first tunnel junction, an indium phosphide (InP) sub-cell, a second tunnel junction and a gallium indium arsenide (GaInAs) sub-cell from bottom to top according to the layered superposition structure. USE - The inverted multi-junction solar cell based on gallium arsenide substrate is useful for solar power supply system of aerospace satellite and in solar photovoltaic field. ADVANTAGE - The inverted multi-junction solar cell: has more reasonable band-gap structure and higher conversion efficiency, and uses the two-dimensional graphene material characteristic to reduce interface stress, uses AlSbP layer with increased growth temperature to gradually releases the epitaxial stress, which can improve the GaAs substrate.