• 专利标题:   Defining method of standard resistance by graphene quantum Hall platform for e.g. nanomaterial by preparing graphene realizing quantum Hall effect platform in higher parameter space by grid voltage control to use quantum resistance standard.
  • 专利号:   CN114335334-A
  • 发明人:   ZHANG T, YANG K, GAO X, HAN Z
  • 专利权人:   UNIV SHANXI
  • 国际专利分类:   H01L043/06, H01L043/14
  • 专利详细信息:   CN114335334-A 12 Apr 2022 H01L-043/14 202243 Chinese
  • 申请详细信息:   CN114335334-A CN11604308 25 Dec 2021
  • 优先权号:   CN11604308

▎ 摘  要

NOVELTY - The method comprises preparing CrOCl-supported graphene system, realizing quantum Hall effect platform in higher parameter space by grid voltage control, using quantum resistance standard to replace original resistance object standard, and obtaining next generation of resistance reference. USE - Method for defining a standard resistance by CrOCl-supported graphene quantum Hall platform used in nanomaterial heterogeneous structure application research field and quantum metrology. ADVANTAGE - The method enables realizing stable quantum transverse conductance platform, thus reducing threshold of quantum resistance standard to replace original resistance object standard, and realizing large area growth of CrOCl graphene system through chemical weather deposition and other growth method, and hence reducing cost of the graphene system, measuring simple quantum resistance, and making graphene into an excellent material system of a next generation quantum metering device conveniently. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of device for method for defining a standard resistance by CrOCl-supported graphene quantum Hall platform.