▎ 摘　　要

NOVELTY - The transistor has a substrate (1), a control grid (2), a metal anode (3) and a metal cathode (4) is arranged sequentially from bottom to top. The metal anode and metal cathode are distributed at both ends of the control grid. A nano-gap runs through a regulating gate. A graphene film and a silicon dioxide layer are arranged in sequence between the metal cathode and the control grid. The turn-on and turn-off between the metal anode and the metal cathode is realized by adjusting the voltage of the control grid. The substrate is a silicon (SI) substrate, and SI dioxide is grown on the Si substrate. The material of the control grid is provided with copper, aluminum, polysilicon and indium tin oxide (ITO). The thickness of the regulating grid is 30-50 nm. The thickness of the metal anode is 60-100 nm. USE - Graphene-based nanogap field emission transistor. ADVANTAGE - The transistor provides high frequency characteristic, and realizes source or drain distance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing graphene-based nanogap field emission transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the graphene-based nanogap field emission transistor. Substrate (1) Control grid (2) Metal anode (3) Metal cathode (4) Nanometer gap (5)