▎ 摘　　要

NOVELTY - Method for preparing graphene film involves (a) placing a growth substrate on a support structure and continuously conveying to a reaction cavity of chemical vapor deposition reaction under the action of a transmission mechanism with the support structure, (b) growing the graphene film on the growth substrate in the reaction cavity, and (c) moving the growth substrates in reaction cavity at a predetermined speed under the effect of the conveying mechanism along with the supporting structure until the reaction chamber is conveyed out. USE - Method for preparing graphene film. ADVANTAGE - The method enables preparing graphene film by chemical vapor deposition (CVD) method, thus realizing continuous preparation of graphene film without reducing the growth temperature and preparing high quality graphene film. The porous carbon film has excellent chemical stability and mechanical property, thus making the metal substrate of the graphene film grow without bearing tensile force at high temperature to be transmitted, avoiding the deformation of the substrate, and hence avoiding the breaking of the film caused by stretching and breaking. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view showing the flow direction of the porous carbon material supporting the growth substrate.