▎ 摘　　要

NOVELTY - The modulator has a silicon substrate (1), silicon micro-nano structure (2) and two-dimensional thin film material (3). The micro-nano structure of silicon is located on the surface of silicon substrate. The two-dimensional thin film material that is arranged on the silicon micro-nano structure. The silicon micro-nano structure and the silicon substrate are the same doped silicon. The silicon micro-nano structure is one or a composite structure of silicon nanowires and silicon micro-nano pyramids. The length of the silicon nanowire is 1-15μ m. The height of that silicon micro-nano pyramid is 1-15μ m. The two-dimensional thin film material is graphene, molybdenum disulfide, tungsten disulfide, tungsten diselenide, Rhenium diselenide or hafnium diselenide. USE - Terahertz modulator based on silicon micro-nano structure for use in field of wireless communication, imaging, radar and national defense security and in fields of optoelectronic devices and microelectronic devices. ADVANTAGE - The modulation depth of the device reaches 92%, and the modulation performance of 2- experimental group is significantly improved than that of 2- control group. The terahertz modulator arranges the silicon micro-nano structure on the silicon substrate, and utilizes the light trapping effect to improve both the photoelectric conversion efficiency of the modulation device for pumping light excitation and the multiple oscillation feedback excitation effect of the pumping light in the silicon micro-nano structure. The terahertz modulator regulates and controls the terahertz wave under extremely low pumping light power. The terahertz modulator is simple in structure, convenient to manufacture and suitable for popularization and application. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structural diagram of a terahertz modulator. 1Silicon substrate 2Silicon micro-nano structure 3Two-dimensional thin film material