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  • 专利标题:   Formation of graphene substrate for graphene device, involves forming substrate, forming catalyst layer on substrate, forming graphene and optionally removing catalyst layer.
  • 专利号:   KR2012042655-A
  • 发明人:   PARK K
  • 专利权人:   ELECTRONICS TELECOM RES INST
  • 国际专利分类:   C01B031/02, C23C016/26
  • 专利详细信息:   KR2012042655-A 03 May 2012 C01B-031/02 201313 Pages: 22
  • 申请详细信息:   KR2012042655-A KR103962 12 Oct 2011
  • 优先权号:   KR103579

▎ 摘　　要

NOVELTY - A substrate is prepared and a catalyst layer is formed on the substrate. Graphene is formed on the catalyst layer and the catalyst layer is optionally removed to obtain graphene substrate for graphene device. USE - Formation of graphene substrate for graphene device. ADVANTAGE - The graphene substrate with large area is formed stably by a simple process.