▎ 摘　　要

NOVELTY - The method involves providing a support substrate (10). The crystal layer (11) having a first crystal surface is provided on the support substrate. The graphene layer (20) is provided on the crystal layer. The structure having the first crystal surface is provided on the graphene layer. The graphene layer is removed from the support substrate. The graphene layer to be positioned on the flexible substrate is transferred. USE - Method for producing epitaxy structure (claimed). ADVANTAGE - The epitaxial structure achieves stability, even in bending by transferring to a flexible substrate by separating the support substrate and the graphene layer without damaging the inorganic structure. The crystal characteristics of the substrate and the crystal layer Structures with various crystal orientations can be formed. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an epitaxy structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the epitaxy structure. Epitaxy structure (1) Support substrate (10) Crystal layer (11) Graphene layer (20) Thin film structure (31)