▎ 摘　　要

NOVELTY - Stacked silicon quantum dot heterojunction solar cell, comprises aluminum electrode layer (1) is provided at the bottom and gold electrode layer at top. The aluminum electrode layer is vapor-deposited on one surface of an n-type silicon substrate. The multiple of n-type silicon nanowires (3) vertically distributed are etched on other side surface of n-type silicon substrate . The n-type silicon substrate and n-type silicon nanowire are an integrated structure of same material. The n-type silicon substrate. The surface of n-type silicon nanometer is uniformly deposited with a p-type laminated tapered band gap silicon quantum dot multilayer film. The graphene layer (5) is provided on surface of p-type laminated tapered band gap silicon quantum dot multilayer film. The gold electrode layer is evaporated on surface of graphene layer. USE - Used as stacked silicon quantum dot heterojunction solar cell. ADVANTAGE - The solar cell improves photoelectric performance of device and photoelectricity of the battery conversion efficiency to 7.4%. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing stacked silicon quantum dot heterojunction solar cells, comprising etching n-type silicon nanowires on n-type silicon substrate by a metal ion-assisted chemical etching method, etching n-type silicon nanowires with a cylindrical structure, preparing p-type multilayer tapered band gap silicon quantum dot multilayer film and a p-type grown on an n-type silicon substrate and an n-type silicon nanowire by a plasma enhanced vapor deposition process, laminating multilayer band gap silicon quantum dot multilayer film, preparing graphene layer by a vapor deposition process on a p-type laminated tapered band gap silicon quantum dot multilayer film, depositing gold electrode layer on graphene layer and (v) depositing gold electrode layer on back surface of n-type silicon substrate.