▎ 摘　　要

NOVELTY - A side grid graphene transistor preparation method involves cleaning silicon carbide, removing pollutant on surface, cleaning silicon carbide wafer surface by using plasma enhanced chemical vapour deposition process for depositing a silica mask layer, etching side gate structure transistor image window on the silica mask layer, forming a pattern of window set in a quartz tube, heating, introducing argon gas to the quartz tube and the mixed gas of chlorine gas, and forming a side-gate transistor gate, a source electrode, a drain electrode and a conductive channel image of a carbon film. USE - Method for preparing a side grid graphene transistor. ADVANTAGE - The method enables preparing side grid graphene transistor with high mobility. DETAILED DESCRIPTION - A side grid graphene transistor preparation method involves cleaning silicon carbide, removing pollutant on surface, cleaning silicon carbide wafer surface by using plasma enhanced chemical vapor deposition process for depositing a silica mask layer with thickness of 0.4-1.2 microns, etching side gate structure transistor image window on the silica mask layer, forming a pattern of window set in a quartz tube, heating to 700-1100 degrees C, introducing argon gas to the quartz tube and mixing of chlorine gas for 4-10 minutes, exposing silicon carbide to react with chlorine gas, forming a side-gate transistor gate, a source electrode, a drain electrode and a conductive channel image of a carbon film, setting the carbon film in buffering hydrofluoric acid solution to remove the redundant window outside silica and removing the carbon film on copper film. The resultant product is processed at 900-1200 degrees C, followed by annealing for 15-25 minutes, removing a copper film from graphene, performing electron beam evaporation process on palladium-gold layer, etching metal contact by reactive ion etching process, removing acrylic acid resin polymethyl methacrylate residue using acetone solution for 10 minutes, removing and drying filter cake to obtain a graphene sidegate transistor.