• 专利标题:   Preparation of double-layer graphene film LED electrode material, involves covering surface of LED chip with double-layer graphene film comprising molybdenum nitrogen-doped graphene film/iridium-silver nitrogen-doped graphene film.
  • 专利号:   CN110797445-A, CN110797445-B
  • 发明人:   DUAN L, WEI X, GUO T, WANG Z
  • 专利权人:   UNIV CHANGAN
  • 国际专利分类:   H01L033/00, H01L033/40
  • 专利详细信息:   CN110797445-A 14 Feb 2020 H01L-033/40 202020 Pages: 7 Chinese
  • 申请详细信息:   CN110797445-A CN10937843 30 Sep 2019
  • 优先权号:   CN10937843

▎ 摘  要

NOVELTY - Preparation of double-layer graphene film LED electrode material, involves covering the surface of an LED chip with a double-layer graphene film comprising a molybdenum nitrogen-doped graphene film/iridium-silver nitrogen-doped graphene film. The molar ratio of carbon, molybdenum and nitrogen in the molybdenum nitrogen-doped graphene film is (90-110):(0.6-1):(1-1.5), preferably 100:0.8:1.2. The molar ratio of carbon, iridium, silver and nitrogen in the iridium-silver nitrogen-doped graphene film is (90-110):(0.9-1.2):(0.6-1):(0.6-1), preferably 100:1:0.8:0.8. USE - Preparation of double-layer graphene film LED electrode material (claimed). ADVANTAGE - The method enables simple and safe industrial preparation of large-area double-layer graphene film LED electrode material having excellent heat conductivity and light transmittance, and large light-emitting surface, which enhances current conduction capability, using economical device and raw materials. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for double-layer graphene film LED electrode material.