▎ 摘　　要

NOVELTY - Hard mask film (10) comprises a first graphene layer (110). A first amorphous carbon layer (121) on the first graphene layer. A second graphene layer (122) on the first amorphous carbon layer. A second amorphous carbon layer on the second graphene layer. The hard mask film may be directly disposed over a semiconductor element (20) in a semiconductor process. USE - Hard mask film used in etching process for manufacturing semiconductor device, such as vertical NAND (VNAND) Flash (RTM: Computer multimedia application) memory. ADVANTAGE - The hard mask film capable of maintaining or enhancing etch selectivity while reducing a thickness, and reducing and/or minimizing ions remaining in a chamber after being formed by a plasma in a process of etching a hard mask. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a hard mask film, which involves: (a) forming a first graphene layer on a semiconductor element in one chamber; and (b) forming a set of amorphous carbon layers and a set of graphene layers alternately disposed on the first graphene layer in the one chamber. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a hard mask film. 10Hard mask film 20Semiconductor element 110First graphene layer 121First amorphous carbon layer 122Second graphene layer