▎ 摘　　要

NOVELTY - The device has a source electrode laminated on a substrate that is formed with two ends of a graphene layer. A palladium layer ejects electron with the hydrogen to outside. The hydrogen is deposited in a part of a graphene layer that is formed in a top surface of the substrate. The substrate is thrown on a groove part that is connected with a top surface of a dielectric layer. The dielectric layer is formed with a groove that is fixed on a gate electrode. The source electrode and a drain electrode are inserted into the groove. The gate electrode is made of gold. USE - Semiconductor device. ADVANTAGE - The electron injects the hydrogen into palladium so as to improve conductivity to measure concentration gradient of the electron / hole, so that a semiconductor device can be manufactured with high stability and high productivity based on simple lithography process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor device fabricating method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor device.