• 专利标题:   Structure, useful for forming graphene layer useful in e.g. high-speed semiconductor, comprises highly oriented pyrolytic graphite with an exposed surface, metal layer, coating layer, and support attached to surface of metal layer.
  • 专利号:   KR2014144854-A, KR1509422-B1
  • 发明人:   LEE Y S, KIM J H
  • 专利权人:   DH ENERGY ENVIRONMENT CORP
  • 国际专利分类:   C01B031/02, H01B013/00, H01B005/14
  • 专利详细信息:   KR2014144854-A 22 Dec 2014 H01B-005/14 201503 Pages: 12
  • 申请详细信息:   KR2014144854-A KR066939 12 Jun 2013
  • 优先权号:   KR066939

▎ 摘  要

NOVELTY - The structure comprises highly oriented pyrolytic graphite (HOPG) with an exposed surface, a metal layer formed on one side of the exposed surface of the HOPG, a coating layer formed on the other side of the exposed surface of the HOPG, and a support attached to a surface of the metal layer. The coating layer is made of a metal, a polymer or a photoresist. The support is made of a glass or metal. The support is attached to the metal layer using a conductive adhesive. USE - The structure is useful for forming a graphene layer (claimed), which is useful in a high-speed semiconductor, a high-efficiency solar cell, a computer display, and a transparent electrode. ADVANTAGE - The structure is capable of effectively forming the graphene layer with improved transparency, elasticity, thermal conductivity, and electrical characteristics. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a method for manufacturing the structure; and (2) a method for forming graphene layer using the structure.