▎ 摘　　要

NOVELTY - Photodetector comprises a photosensitive layer of gallium oxide bulk junction material is located on a substrate. The photosensitive layer of gallium oxide bulk junction material includes semiconductor material which forms a type II heterojunction with gallium oxide and gallium oxide mixed based on a preset ratio. The counter electrode is oppositely arranged on upper surface of gallium oxide bulk junction material photosensitive layer or upper and lower surfaces of gallium oxide bulk junction material photosensitive layer. The semiconductor material forming type II heterojunction with gallium oxide is zinc oxide, nickel oxide, aluminum nitride, cadmium sulfide, selenium sulfide, gallium nitride, copper oxide, molybdenum disulfide, or ferroferric oxide. USE - The photodetector is useful for deep ultraviolet and X-ray detection, and in national soil safety radiation diffusion, space communication, medical health, aerospace and astronomical observation and military and civilian application fields. ADVANTAGE - The method: is simple, easy, and economical; and realizes large-area growth uniform film; and also reduces crystal lattice mismatch of traditional thin film type hetero-junction, and band-matching material. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing photodetector.