▎ 摘 要
NOVELTY - An in-situ electrical graphene background deduction detecting method involves producing plasmon enhancement components and infrared detection device, overlying graphene layer on dielectric layer, depositing source. The sample is placed on the microstructure of graphene. The micro-structure of graphene is tested by measuring graphene transport Ids-Vg curve, followed by utilizing in situ methods subtraction of background infrared signal testing, detecting voltage background and determining nature of the different layers of dielectric material and the specific needs of the measurement range. USE - Method for detecting in-situ electrical graphene background deduction. DETAILED DESCRIPTION - An in-situ electrical graphene background deduction detecting method involves producing plasmon enhancement components and infrared detection device, placing graphene layer and source metal layer between the metal layer and the drain layer having a periodic microfabrication, providing periodic structure comprising multiple micro-nano continuous longitudinal sectional view of a stepped structure, disposing material layer to cover the stepped structure, overlying graphene layer on dielectric layer, depositing source and drain metal layer on the graphene layer. The source and drain metal conductive layer and graphite and the substrate alkenyl layer are sandwiched between dielectric layers to form a structure similar to a parallel plate capacitor. The sample to be tested is placed on the microstructure of graphene. The micro-structure of graphene is tested by measuring graphene transport Ids-Vg curve, followed by utilizing in situ methods subtraction of background infrared signal testing, detecting voltage background, eliminating spectrum acquisition, adjusting the voltage Vg, enhancing the degree of signal samples, collecting extinction spectrum T (EF), and determining nature of the different layers of dielectric material and the specific needs of the measurement range, where the plasmon enhancement components and infrared detection device comprises substrate, dielectric layer, graphene layer, metal layer, source and drain layer.