• 专利标题:   Preparing single crystal graphite comprises e.g. placing metal foil in plasma device, introducing nitrogen-containing gas, starting plasma excitation source for plasma treatment, placing metal foil in reaction furnace, annealing, starting growth of graphene single crystal at growth temperature.
  • 专利号:   CN114657635-A, CN114657635-B
  • 发明人:   ZHAO M, LI G, WANG B, WEI W, XU X, GUO Y, LI J, JIAN X, QUE L, ZHOU Z
  • 专利权人:   UNIV SOUTHWEST JIAOTONG
  • 国际专利分类:   C21D009/46, C22F001/02, C22F001/08, C22F001/10, C22F001/18, C23F017/00, C23G005/00, C30B025/00, C30B029/02
  • 专利详细信息:   CN114657635-A 24 Jun 2022 C30B-025/00 202271 Chinese
  • 申请详细信息:   CN114657635-A CN10280039 22 Mar 2022
  • 优先权号:   CN10280039

▎ 摘  要

NOVELTY - Preparing single crystal graphite comprises (a) placing the metal foil in a plasma device, introducing nitrogen-containing gas as an inducing gas, and starting the plasma excitation source for plasma treatment to obtain a metal foil with a clean surface and induced activation, (b) placing the metal foil in a reaction furnace and introducing an inert gas, heating up to the annealing temperature and performing annealing treatment, and (c) introducing carbon source and reducing gas into the reaction furnace, starting the growth of graphene single crystal at the growth temperature, and completing growth. USE - The method is useful for preparing single crystal graphite. ADVANTAGE - The method reduces the number of single-crystal graphene nucleation sites to a minimum of 0.4 mm2, while the growth rate of single-crystal graphene reaches 38.3 μm/minute. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: ingle crystal graphene obtained by the above mentioned method; urface treatment method of metal foil for graphene growth; increasing the growth rate of single crystal graphene.