▎ 摘　　要

NOVELTY - Preparing single crystal graphite comprises (a) placing the metal foil in a plasma device, introducing nitrogen-containing gas as an inducing gas, and starting the plasma excitation source for plasma treatment to obtain a metal foil with a clean surface and induced activation, (b) placing the metal foil in a reaction furnace and introducing an inert gas, heating up to the annealing temperature and performing annealing treatment, and (c) introducing carbon source and reducing gas into the reaction furnace, starting the growth of graphene single crystal at the growth temperature, and completing growth. USE - The method is useful for preparing single crystal graphite. ADVANTAGE - The method reduces the number of single-crystal graphene nucleation sites to a minimum of 0.4 mm2, while the growth rate of single-crystal graphene reaches 38.3 μm/minute. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: ingle crystal graphene obtained by the above mentioned method; urface treatment method of metal foil for graphene growth; increasing the growth rate of single crystal graphene.