▎ 摘　　要

NOVELTY - Preparing graphene thermal interface material of electronic device heat dissipation with diamond load comprises (a) taking graphene sheets, performing ultrasonic treatment in absolute ethanol to fully disperse graphene in ethanol, (b) taking diameter diamond powder, (c) performing suction filtration on sonicated solution, (d) soaking the annealed product with absolute ethanol containing 3-glycidoxypropyltrimethoxysilane (silane coupling agent KH-570), (e) mixing epoxy resin with the catalyst neodymium acetylacetonate (III) hydrate, (f) soaking thermally conductive framework into mixed solution B and removing air bubbles in a vacuum oven at 50-70degrees Celsius until air bubbles are completely removed and (g) subjecting the thermally conductive framework fully infiltrated with epoxy resin in step (f) to two-step treatment at 115-135degrees Celsius for 2-4 hours andat 165-185degrees Celsius for 14-18 hours in an ordinary oven to obtain the final graphene thermal interface material. USE - The method is useful for preparing graphene thermal interface material of electronic device heat dissipation with diamond load. ADVANTAGE - The method is economical, has simple preparation process; can meet different usage requirements; is suitable for mass-production and has good repeatability. The graphene thermal interface material has high longitudinal thermal conductivity, high isotropic thermal conductivity and shape and size can be dynamically adjusted according to the device structure. DETAILED DESCRIPTION - Preparing graphene thermal interface material of electronic device heat dissipation with diamond load comprises (a) taking 100-1000 mg graphene sheets, performing ultrasonic treatment in absolute ethanol to fully disperse the graphene in the ethanol, thus average sheet diameter of the graphene sheets is reduced to 7 mum, (b) taking 300-3000 mg diameter diamond powder (2 mum) and ultrasonically mixing graphene solution for 1-3 hours, (c) performing suction filtration on the sonicated solution in step (b), taking off the suction filtration product, air-drying at room temperature and performing high temperature annealing treatment at 2500-3000degrees Celsius, (d) soaking the annealed product in step (c) with absolute ethanol containing 1-10 wt.% 3-glycidoxypropyltrimethoxysilane (silane coupling agent KH-570), taking out and air-drying at room temperature to obtain a thermally conductive framework, (e) mixing epoxy resin with the catalyst neodymium acetylacetonate (III) hydrate and stirring at 80-120degrees Celsius for 2-4 hours, mixing stirred mixed solution A with the curing agent methyl hexahydrophthalic anhydride and stirring at room temperature for 1-3 hours to obtain mixed solution B, (f) soaking thermally conductive framework of step (d) into the mixed solution B of step (e) and removing air bubbles in a vacuum oven at 50-70degrees Celsius until air bubbles are completely removed and (g) subjecting the thermally conductive framework fully infiltrated with epoxy resin in step (f) to two-step treatment at 115-135degrees CelsiusC for 2-4 hours andat 165-185degrees Celsius for 14-18 hours in an ordinary oven to obtain the final graphene thermal interface material.