▎ 摘　　要

NOVELTY - The semiconductor device has first wiring (M5) formed above semiconductor substrate (S). A second wiring (M6) is formed through an interlayer insulating film (IL6) on first wiring. The pad metal (PDM) is formed through an interlayer insulating film (IL7) on second wiring. A protective layer covers the pad metal. The interlayer insulating film contains graphene particles (GR). USE - Semiconductor device. ADVANTAGE - The heat dissipation of semiconductor device is improved. The performance of semiconductor device is increased. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of semiconductor device. (Drawing includes non-English language text) Graphene particles (GR) Interlayer insulating films (IL6,IL7) Wirings (M5,M6) Pad metal (PDM) Semiconductor substrate (S)