▎ 摘　　要

NOVELTY - Method for reducing damage to a substrate when using plasma-enhanced atomic layer deposition (PEALD) to grow a thin film involves (s1) placing the substrate on a PTFE support for standardized cleaning process, (s2) quickly putting the cleaned substrate into a PEALD reaction chamber, reaching the deposition temperature, and keeping the temperature for at least 20 minutes to reach stable temperature, (s3) selecting water source/ozone source and a metal source without plasma to deposit an oxide film at 200-300℃, and (s4) selecting a plasma source and metal source to deposit a nitride film at 200-350℃. USE - Method for reducing damage to substrate when using plasma-enhanced atomic layer deposition to grow thin film. ADVANTAGE - The method effectively avoids plasma damage to the substrate, maintains the chamber pressure stable, improves the interface quality between the epitaxial film and the substrate, effectively reduces leakage current, and improves device performance. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of method for reducing the damage to the substrate when using PEALD to grow film. (Drawing includes non-English language text).