▎ 摘　　要

NOVELTY - Preparation of conductive film involves mixing substance formed from graphene oxide, dextran as processing agent, and potassium iodate solution, with water at a mass ratio of 1:100 to obtain a mixed dispersion, mixing the mixed dispersion with the pretreated silicon wafer in a four-necked flask, adding sodium borohydride with 0.02 times the mass of the mixed dispersion to the flask, filtering and drying the film-supported silicon wafer, removing the film, performing index analysis on the obtained substances. The pretreated silicon wafer is performed by mixing the silicon wafer and the acid mixture at a mass ratio of 1:10, soaking and filtering to obtain silicon wafer blank, mixing the wafer blank with the alkaline mixture at a mass ratio of 1:8, soaking, filtering, and drying. The acidic mixed liquid is obtained by mixing 98 %mass sulfuric acid and 30 %mass hydrogen peroxide in a volume ratio of 7:3. USE - Preparation of conductive film. ADVANTAGE - The method enables preparation of conductive film having excellent low-temperature-and-high temperature resistance, transparency, and light transmittance. DETAILED DESCRIPTION - Preparation of conductive film involves (1) mixing graphene oxide and water in mass ratio of 1:200, ultrasonically-dispersing for 80 minutes at frequency of 45 kHz to obtain graphene oxide sol, mixing the graphene oxide sol with dextran in a mass ratio of 30:5, adjusting the pH of the graphene oxide sol and dextran mixture to 11 with 18% aqueous ammonia, stirring and reacting for 5 hours at 60 degrees C and 300 rpm, filtering to obtain a filter residue, drying the filter residue at 90 degrees C for hours, (2) mixing obtained substance and 3 %mass potassium iodate solution in a three-necked flask in a mass ratio of 1:10, introducing nitrogen into the flask at a rate of 30 mL/minute at 75 degrees C, after stirring and reacting for 6 hours at 320 rpm, filtering mixture to obtain pretreated graphene, washing pretreated graphene with deionized water 8 times and drying at 80 degrees C for 3 hours, (3) mixing the pretreated silicon wafer with 10% polyallylamine hydrochloride solution in a mass ratio of 1:10, soaking for hours at room temperature and filter to obtain a filter cake, mixing the filter cake with 8% ammonium tetrachlorozincate solution in a mass ratio of 1:8, soaking, filtering, and drying at 80 degrees C for 3 hours, (4) mixing the substance obtained in step (2) with water at a mass ratio of 1:100, and ultrasonically dispersing for 30 minutes at frequency of 48 kHz to obtain a mixed dispersion, mixing the mixed dispersion with the substance obtained in step (3) in a mass ratio of 30:1 in a four-necked flask, after soaking for 30 minutes at room temperature, adding sodium borohydride with 0.02 times the mass of the mixed dispersion to the flask, introducing nitrogen into the four-neck flask at a rate of 30 mL/minute, at 75 degrees C and 300 rpm, stirring the reaction mixture for 4 hours, filtering to obtain a film-mounted silicon wafer, after drying the film-supported silicon wafer at 70 degrees C for 2 hours, removing the film, (5) performing index analysis on the substances obtained in step (4). In step (3), the pretreated silicon wafer is performed by mixing the silicon wafer and the acid mixture at a mass ratio of 1:10, soaking and filtering to obtain silicon wafer blank, mixing the wafer blank with the alkaline mixture at a mass ratio of 1:8, soaking, filtering, and drying. The acidic mixed liquid is obtained by mixing 98 %mass sulfuric acid and 30 %mass hydrogen peroxide in a volume ratio of 7:3. The alkaline mixed liquid is obtained by mixing 28% aqueous ammonia with 30 %mass hydrogen peroxide in a volume ratio of 1:1, adding 5 times the volume of hydrogen peroxide, and stirring and mixing.