▎ 摘　　要

NOVELTY - The semiconductor device has a resin material (MR) covering a semiconductor chip (CH). The resin material contains a resin, potassium ion and graphene particles (GR). The semiconductor chip is coupled onto a substrate through a bump electrode (BP). An underfill material is arranged between the substrate and semiconductor chip. The underfill material contains a resin and graphene particles. A heatsink is embedded in the resin material. USE - Semiconductor device. ADVANTAGE - The improved thermal conduction of the sealing resin and improved radiation performance of the semiconductor device are achieved, since the graphene particles are mixedly added in the underfill material. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the configuration of the semiconductor device. Bump electrode (BP) Semiconductor chip (CH) Die-bonding material (DB) Graphene particle (GR) Resin material (MR)