• 专利标题:   Manufacturing graphene, comprises growing graphene on a quartz substrate without using catalyst.
  • 专利号:   KR2013049048-A, KR1301443-B1
  • 发明人:   CHOI J W, LEE C M
  • 专利权人:   UNIV KYUNGHEE IND COOP
  • 国际专利分类:   C01B031/04, C09K011/00, C09K011/08
  • 专利详细信息:   KR2013049048-A 13 May 2013 C09K-011/00 201369 Pages: 12
  • 申请详细信息:   KR2013049048-A KR114076 03 Nov 2011
  • 优先权号:   KR114076

▎ 摘  要

NOVELTY - Manufacturing graphene, comprises growing graphene on a quartz substrate without using catalyst. USE - The method is useful for manufacturing graphene (claimed). ADVANTAGE - The method is capable of efficiently manufacturing the graphene with high visible luminescence property and increased light absorption rate and without using metallic catalyst. DESCRIPTION OF DRAWING(S) - The figure shows a flow chart of a method for manufacturing graphene. Preparing substrate (S610) Depositing metallic catalyst (S620) Chemical vapor deposition (S630) Etching the substrate (S640) transferring graphene on substrate. (S650)