• 专利标题:   Producing graphene layer from liquid metal matrix on solid metal or ceramic substrate of multilayered plate containing e.g. graphene forming matrix, comprises heating, annealing and supplying acetylene, ethylene and hydrogen and cooling.
  • 专利号:   EP2865646-A1, US2015122659-A1, US9284640-B2, EP2865646-B1, EP2865646-B8, ES2589793-T3
  • 发明人:   MODRZYK W, KULA P, RZEPKOWSKI A, PIETRASIK R, ATRASZKIEWICZ R, DYBOWSKI K
  • 专利权人:   ADVANCED GRAPHENE PROD SP ZOO, POLITECHNIKA LODZKA, POLITECHNIKA LODZKA, ADVANCED GRAPHENE PROD SP ZOO, ADVANCED GRAPHENE PROD SP ZOO, POLITECHNIKA LODZKA, POLITECHNIKA LODZKA
  • 国际专利分类:   C01B031/04, C23C014/35, C25D021/02, C25D021/04, C25D003/38, C23C016/00, C23C016/01, C23C016/26, C25D005/48, C25D007/00
  • 专利详细信息:   EP2865646-A1 29 Apr 2015 C01B-031/04 201534 Pages: 12 English
  • 申请详细信息:   EP2865646-A1 EP005122 28 Oct 2013
  • 优先权号:   EP005122, US069731

▎ 摘  要

NOVELTY - Producing graphene layer from liquid metal matrix on solid metal or ceramic substrate comprising multilayered plate containing, as graphene forming matrix, an external layer composed of a metal or a metal alloy and, as a support substrate, between 1 and 5 layers made of transition metals and/or their alloys and/or metalloids and/or their solutions and compounds with melting points of 1151-3410 degrees C, comprises: (a) heating plate; (b) annealing and supplying acetylene, ethylene and hydrogen; and (c) cooling, partially controlled with cooling rate maintained at 0.1 and 2 degrees C/minute in 1200-1050 degrees C. USE - The method is useful for producing graphene from a liquid metal. DETAILED DESCRIPTION - Producing a graphene layer from a liquid metal matrix on a solid metal or ceramic substrate comprising a multilayered plate containing, as the graphene forming matrix, an external layer composed of a metal or a metal alloy with a melting point of 1051-1150 degrees C and, as a support substrate, between 1 and 5 layers made of transition metals and/or their alloys and/or metalloids and/or their solutions and compounds with melting points of 1151-3410 degrees C, using the mixture of acetylene, ethylene and hydrogen as carburizing medium, comprises: (a) heating the plate until the plate reaches 0.5-50 degrees C higher than the melting point of the forming matrix; (b) annealing, at a constant or variable temperature for 60-600 seconds, concurrently supplying the atmosphere with acetylene at a partial pressure of 0-4 hPa, ethylene at a partial pressure of 0-4 hPa and hydrogen at a partial pressure of 0-2 hPa for 10-300 seconds; and (c) cooling, partially controlled, with the cooling rate maintained at 0.1 and 2 degrees C/minute in 1200-1050 degrees C, where the heating, annealing and cooling steps are conducted in the atmosphere of pure argon at a constant partial pressure of 1-1100 hPa.