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  • 专利标题:   Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.
  • 专利号:   EP2392547-A2, US2011300058-A1, WO2011155858-A2, EP2392547-A3, JP2011256100-A, WO2011155858-A3, PL391416-A1, PL213291-B1, KR2013040904-A, CN102933491-A, KR1465452-B1, JP5662249-B2, US9067796-B2, CN102933491-B, EP2392547-B1
  • 发明人:   STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O
  • 专利权人:   MATERIALOW ELEKTRONICZNYCH TECHNOLOGY, MATERIALOW ELEKTRONICZNYCH TECHNOLOGY, MATERIALOW ELEKTRONICZNYCH TECHNOLOGY, INST ELECTRONIC MATERIALS TECHNOLOGY, MATERIALOW ELEKTRONICZNYCH TECHNOLOGY
  • 国际专利分类:   C01B031/04, C30B025/02, C30B025/18, C30B029/02, C30B029/64, C30B025/10, C30B025/14, C30B025/16, C01B031/02, B82Y030/00, B82Y040/00, C01B032/182, C01B032/184, C01B032/186, C01B032/188
  • 专利详细信息:   EP2392547-A2 07 Dec 2011 C01B-031/04 201181 Pages: 12 English
  • 申请详细信息:   EP2392547-A2 EP168749 06 Jun 2011
  • 优先权号:   PL391416, KR731787

▎ 摘　　要

NOVELTY - Manufacturing graphene comprises: performing vapor phase epitaxy on a substrate (3) comprising a surface of silicon carbide; and controlling sublimation of silicon from the substrate by a flow of an inert gas or a gas other than the inert gas through the epitaxial reactor. USE - The method is useful for manufacturing graphene. ADVANTAGE - The method prevents the complete silicon sublimation from the substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for the graphene obtained by the method. DESCRIPTION OF DRAWING(S) - The figure illustrates a control mechanism of silicon sublimation from a silicon carbide substrate surface and a mechanism of graphene deposition by a propane chemical vapor deposition process. Heaters (2) Substrate (3) Sublimation of Silicon (9) Argon (10) Propane (12)