▎ 摘 要
NOVELTY - Manufacturing graphene comprises: performing vapor phase epitaxy on a substrate (3) comprising a surface of silicon carbide; and controlling sublimation of silicon from the substrate by a flow of an inert gas or a gas other than the inert gas through the epitaxial reactor. USE - The method is useful for manufacturing graphene. ADVANTAGE - The method prevents the complete silicon sublimation from the substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for the graphene obtained by the method. DESCRIPTION OF DRAWING(S) - The figure illustrates a control mechanism of silicon sublimation from a silicon carbide substrate surface and a mechanism of graphene deposition by a propane chemical vapor deposition process. Heaters (2) Substrate (3) Sublimation of Silicon (9) Argon (10) Propane (12)