▎ 摘　　要

NOVELTY - The method involves configuring a clean space fabricator to process a first substrate and a second substrate. A third tool pod is positioned into a third position along a periphery of the fabricator. The first substrate is processed in a first processing apparatus to isolate an integrated circuit of a first design from the first substrate. The integrated circuit is moved to a fourth processing apparatus in a fourth tool pod, where the second substrate is moved through a primary clean space. The second substrate in a third processing apparatus is processed to isolate a second integrated circuit from the second and third substrates. The integrated circuit of the first design is formed in silicon. The integrated circuit of a second design is formed in non-silicon. The third substrate comprises an interposer. A first conductive film comprises graphene. A reactive multilevel foil is a nano reactive multi-layer foil. Hazardous material is explosive. USE - Method for forming 3DIC multi-chip module to process high technology products from initial wafer substrate form to final packaging into products for supporting prototyping and manufacturing of customized smart devices. Uses include but are not limited to integrated circuits, energization elements, display components, sensors, interconnection elements, fuel cells, batteries and discrete electrical switches or connectors. ADVANTAGE - The method enables utilizing clean space fabricator environments for processing high technology products from initial wafer substrate form to final packaging into products that are complete prototypes and marketed goods. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a three-dimensional integrated circuit or three-dimensional packaging technology. 854Silicon vias processing