▎ 摘　　要

NOVELTY - The method involves forming (S10) graphene on one surface of a metal layer. A protection layer (S11) is formed on a graphene layer positioned relative to the other surface of the metal layer. The graphene layer is formed between the metal layer and the protective layer. A base plate is formed (S12) on the surface of the graphene layer and the metal layer. The metal layer is removed (S13), and a conductive layer is formed (S14) on the graphene layer relative to the surface of the protective layer. USE - Method for manufacturing graphene device used for manufacturing solar energy battery such as solar cell, light emitting diode, anti-electrostatic device, super capacitor, electrochromic device, electro wetting device and touch panel (all claimed). ADVANTAGE - Since the conductive layer is formed on the graphene layer relative to the surface of the protective layer, the damage of the graphene device is prevented during migration process. The production efficiency of the graphene device is improved. The yield and uniformity of the graphene device is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an application structure for graphene device. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the process for manufacturing graphene device. (Drawing includes non-English language text) Step for forming graphene on one surface of metal layer (S10) Step for forming protection layer on graphene layer positioned relative to other surface of metal layer (S11) Step for forming base plate on surface of graphene layer and metal layer (S12) Step for removing metal layer (S13) Step for forming conductive layer on graphene layer relative to surface of protective layer (S14)