• 专利标题:   Platinum-graphene grown network/silicon dioxide/n-silicon heterojunction material, comprises n-type silicon provided in silicon oxide layer substrate and platinum-graphene grown network nanoparticles.
  • 专利号:   CN104882507-A, CN104882507-B
  • 发明人:   KANG Z, JIANG L, TAN X, XIANG P, XIAO T, TIAN D
  • 专利权人:   UNIV THREE GORGES, UNIV CHINA THREE GORGES
  • 国际专利分类:   B82Y040/00, H01L031/028, H01L031/0745, H01L031/18
  • 专利详细信息:   CN104882507-A 02 Sep 2015 H01L-031/0745 201581 Pages: 14 Chinese
  • 申请详细信息:   CN104882507-A CN10156307 03 Apr 2015
  • 优先权号:   CN10156307

▎ 摘  要

NOVELTY - A platinum-graphene grown network/silicon dioxide/n-silicon heterojunction material comprises n-type silicon provided in silicon oxide layer substrate and platinum-graphene grown network nanoparticles, where the lower n-type silicon substrate is provided with a titanium/gold metal electrode. USE - Platinum-graphene grown network/silicon dioxide/n-silicon heterojunction material. ADVANTAGE - The heterojunction material has improved fill factor and increased photoelectric conversion efficiency, and can be prepared in simple and cost effective manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing platinum-graphene grown network/silicon dioxide/n-silicon heterojunction material.