▎ 摘　　要

NOVELTY - The interconnect structure has at least one copper-containing structure (18) located on surface of a substrate (12), and contiguous layer of graphene (24) with first portion having bottommost surface in contact with portion of substrate surface. Each dielectric material portion (26L,26R) has bottommost surface in contact with another portion of substrate surface, topmost surface horizontally coplanar with the topmost surface of second portion of contiguous layer of graphene and sidewall surface in contact with first portion of copper-containing structure. USE - Interconnect structure for forming IC. ADVANTAGE - Improves electromigration resistance of the structure since presence of contiguous layer of graphene on the copper-containing structure reduces copper oxidation and surface diffusion of copper ions without increasing the resistance of copper-containing structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the structure after forming a low k dielectric material and etching back the low k dielectric material. Substrate (12) Copper-containing structure (18) Contiguous layer of graphene (24) Dielectric material portion (26L,26R)