1. 平台首页
  2. 国际专利信息
  • 专利标题:   Preparation of graphene on silicon metal-free catalyst comprises taking silicon dioxide sputtering substrate, magnetron sputtering hexagonal boron nitride, chemical vapor depositing, and growing graphene on boron nitride film.
  • 专利号:   CN106868469-A, CN106868469-B
  • 发明人:   ZHANG L
  • 专利权人:   UNIV SHANDONG, UNIV SHANDONG
  • 国际专利分类:   C23C014/06, C23C014/35, C23C016/02, C23C016/26
  • 专利详细信息:   CN106868469-A 20 Jun 2017 C23C-016/02 201750 Pages: 9 Chinese
  • 申请详细信息:   CN106868469-A CN10153507 15 Mar 2017
  • 优先权号:   CN10153507

▎ 摘　　要

NOVELTY - Preparation of graphene on silicon metal-free catalyst comprises taking silicon dioxide sputtering substrate, magnetron sputtering hexagonal boron nitride, chemical vapor depositing, and growing graphene on boron nitride film. USE - Method for preparing graphene on silicon metal-free catalyst. ADVANTAGE - The method is resource-saving. The product has improved consistency, thermal stability and chemical stability.