• 专利标题:   Preparation of wafer/reduced graphene/gold nanocomposite material used for obtaining different morphology on surface of graphene involves functionalizing amino groups, immersing, irradiating with ultraviolet light, and rinsing.
  • 专利号:   CN106442464-A, CN106442464-B
  • 发明人:   XING G, WANG W, ZOU H, SHANG M
  • 专利权人:   UNIV NINGBO, UNIV NINGBO
  • 国际专利分类:   C01B032/184, G01N021/65
  • 专利详细信息:   CN106442464-A 22 Feb 2017 G01N-021/65 201727 Pages: 10 Chinese
  • 申请详细信息:   CN106442464-A CN10859268 19 Sep 2016
  • 优先权号:   CN10859268

▎ 摘  要

NOVELTY - Preparation of wafer/reduced graphene/gold nanocomposite material involves functionalizing amino groups on surface with silica-coated silicon wafers to obtain amino-modified silicon wafers, and dropping ethanol solution of graphene oxide (GO) on silica gel sea to obtain graphene oxide-modified silicon wafer (wafer/GO); and immersing ((wafer/GO)) in sealed tube containing 4-vinylpyridine (P4VP) monomer, irradiating with ultraviolet light for 30-180 minutes, taking out wafer, and rinsing with chloroform solution. USE - Method for preparing wafer/reduced graphene/gold nanocomposite material used for obtaining different morphology on surface of graphene, distributing homogeneous gold nanostructures, and detecting organic small molecules. DETAILED DESCRIPTION - Preparation of wafer/reduced graphene/gold nanocomposite material comprises functionalizing amino groups on surface with silica-coated silicon wafers to obtain amino-modified silicon wafers, and dropping ethanol solution of graphene oxide (GO) on silica gel sea to obtain graphene oxide-modified silicon wafer (wafer/GO); immersing ((wafer/GO)) in sealed tube containing 4-vinylpyridine (P4VP) monomer, irradiating with ultraviolet light for 30-180 minutes, taking out wafer, and rinsing with chloroform solution to obtain silicon wafer/Graphene/poly 4-vinylpyridine brush (wafer/GO/ 4VP brush); soaking (wafer/GO/ 4VP brush) in aqueous solution of chloroauric acid for 6-18 hours, removing, washing wafer with deionized water, absorbing silicon wafer with tetrachloroaurate ions to obtain silicon/GO/P4VP brush, and placing in closed container containing pyrrole for 1-8 hours, where silicon/GO /P4VP brush does not contact with pyrrole to obtain silicon/Graphene/poly-4-vinylpyridine brush/polypyrrole-gold composite (wafers/GO/P4VP/PPy-Au composites); treating wafers/GO/P4VP/PPy-Au composites at 400-800 degrees C for 0.5-3 hours without oxygen to obtain silicon/reduced graphene/gold composite materials (wafers/GO/Au composite material).