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  • 专利标题:   Manufacture of graphene used for transparent electrode, involves growing graphene on growth substrate using plasma device, transferring graphene to target substrate, removing impurities from graphene, and doping graphene with dopant.
  • 专利号:   KR2017116378-A
  • 发明人:   KIM S H, KOO B H, PARK K S
  • 专利权人:   JUSUNG ENG JH
  • 国际专利分类:   B01J019/08, C01B031/04, C23C016/26
  • 专利详细信息:   KR2017116378-A 19 Oct 2017 C01B-031/04 201777 Pages: 12
  • 申请详细信息:   KR2017116378-A KR044032 11 Apr 2016
  • 优先权号:   KR044032

▎ 摘　　要

NOVELTY - Manufacture of graphene involves growing graphene on a growth substrate using a plasma device (a1), transferring the graphene to a target substrate, removing impurities attached to the graphene transferred to the target substrate using a plasma device (a2), and doping the graphene with a dopant using the plasma device (a2). USE - Manufacture of graphene used for transparent electrode. ADVANTAGE - The method enables manufacture of graphene with high quality, and excellent flexibility and sheet resistance characteristics.