▎ 摘　　要

NOVELTY - Preparing carbon-based material film based on common action of bias voltage and laser, comprises installing direct current bias voltage source between grounded reactor wall and cathode conductive substrate, and connecting voltage source cathode with the substrate through hollow stainless steel rod, where the added laser control is vertical to the microwave incident direction, namely parallel to the laser beam of the substrate, The laser irradiation acts on the microwave plasma together with the bias voltage on the substrate. USE - Technology for preparing carbon-based material film based on common action of bias voltage and laser. Uses include e.g. single crystal diamond, diamond film, carbon nano tube, and graphene carbon materials. ADVANTAGE - The method has high deposition film quality, no electrode pollution, better controllability and stable deposition parameter, but the deposition rate is low, causing many productions is relatively difficult. The electron current density on the surface of the substrate and the energy of the electron flow collision substrate are improved, under the condition of positive bias, the electron flux flowing to the substrate surface is increased by about 10 times. In addition, the plasma property of the sheath region is more stable at the center of substrate, the presence of the central stabilizing region is better for depositing large area of uniform diamond film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the device geometry model.