• 专利标题:   Conductive channel solar blind photoelectric detector has epitaxial growth graphene located between two layers of gallium oxide, silicon carbide located under one of gallium oxide, two of electrodes connected with epitaxial growth graphene.
  • 专利号:   CN113314628-A, CN113314628-B
  • 发明人:   HU Y, LAN Z, GUO H, WANG Y, YUAN H, HE Y
  • 专利权人:   UNIV XIDIAN
  • 国际专利分类:   H01L031/0224, H01L031/0336, H01L031/109
  • 专利详细信息:   CN113314628-A 27 Aug 2021 H01L-031/0336 202175 Pages: 10 Chinese
  • 申请详细信息:   CN113314628-A CN10549953 20 May 2021
  • 优先权号:   CN10549953

▎ 摘  要

NOVELTY - The detector comprises a silicon carbide, a gallium oxide, an epitaxial growth graphene and an electrode. The gallium oxide is two layers. The epitaxial growth graphene is located between two layers of the gallium oxide. The silicon carbide is located under one of the gallium oxide. The electrode is two. Two of the electrodes are connected with the other layer of the gallium oxide. Two of the electrodes are connected with the epitaxial growth graphene. USE - Used as a conductive channel solar blind photoelectric detector. ADVANTAGE - The detector: improves the mobility of the device; can greatly improve the response speed of the device; has high response speed, high light dark current ratio and high electron mobility; and has simple structure and convenient use. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the conductive channel solar blind photoelectric detector.