▎ 摘　　要

NOVELTY - The phase change memory cell has a substrate (201), a bottom electrode (203), a heating electrode (204), a graphene layer (205), a phase change material layer (207), and a top electrode (208) from bottom to top. The phase change material layer is not in contact with the heating electrode. The phase change material layer covers an upper surface and a sidewall of the graphene layer. The phase change material layer is located on the upper surface of the graphene layer and on the contact surface between the graphene layer and phase change material layer. The length of the phase change material layer in each direction is less than or equal to the length of the graphene layer in the corresponding direction. USE - Phase change memory cell for use in integrated computing chip and artificial intelligence application. ADVANTAGE - The graphene layer is used as an isolation layer between the heating electrode and phase change material layer to prevent the elements such as germanium and tellurium in the phase change material layer from diffusing into the heating electrode and causing the heating electrode to fail. The heating efficiency of the phase change layer is improved and power consumption of the device is reduced. The reliability of the phase change memory cell is improved and power consumption of the device is reduced. The graphene layer is covered by the phase change material layer, which increases the current density and heat distribution in the vertical direction of the phase change material layer, improves the heat utilization rate, and reduces the power consumption of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing phase change memory cell. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of formation of a top electrode. Substrate (201) Bottom electrode (203) Heating electrode (204) Graphene layer (205) Phase change material layer (207) Top electrode (208)