▎ 摘　　要

NOVELTY - The device has a silicon substrate whose two opposite side ends are provided with a silicon dioxide layer. Two sides of the silicon substrate are respectively provided with a first metal electrode layer and a second metal electrode layer that are fixed on the silicon dioxide layer. The first metal electrode layer and the second metal electrode layer are provided with a vertical graphene nano-carbon layer. The vertical graphene nano-carbon layer is fixed on an upper surface of the silicon substrate to form photoelectric hetero junction. The first metal electrode layer and the second metal electrode layer are provided with a power supply to output source/drain voltage. A third metal electrode layer and a fourth metal electrode layer are connected with the power supply to output gate voltage. The first metal electrode layer, the second metal electrode layer and the third metal electrode layer are made of titanium alloy material. USE - Crystalline graphene nano-carbon layer based FET structure photoelectric conversion device. ADVANTAGE - The device can change the vertical graphene nano-carbon layer by applying the source/drain voltage between the first metal electrode layer and the second metal electrode layer and the gate voltage between the third metal electrode layer and the fourth metal electrode layer so as to improve FET structure photoelectric conversion efficiency and increase FET structure photoelectric conversion speed and reduce ultra-bandwidth consumption. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a crystalline graphene nano-carbon layer based FET structure photoelectric conversion device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a circuit diagram of a crystalline graphene nano-carbon layer based FET structure photoelectric conversion device.