• 专利标题:   Graphene structure useful for ultra-sensitive microphotonic devices with microvolts inputs, comprises at least one graphene layer including two different dielectric materials.
  • 专利号:   US2020319525-A1
  • 发明人:   QASYMEH M Y A, EL EUCH H
  • 专利权人:   UNIV ABU DHABI
  • 国际专利分类:   C01B032/182, G02F001/35
  • 专利详细信息:   US2020319525-A1 08 Oct 2020 G02F-001/35 202090 Pages: 31 English
  • 申请详细信息:   US2020319525-A1 US537617 11 Aug 2019
  • 优先权号:   US373605, US537617

▎ 摘  要

NOVELTY - Graphene structure (100) comprises at least one graphene layer (104) including two different dielectric materials. USE - The graphene structure is useful for ultra-sensitive microphotonic devices with mu V inputs. ADVANTAGE - The graphene structure has lower microwave driving voltages, a smaller graphene length, wider microwave frequency range, and reasonable pump amplitudes. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of model graphene structural design. Graphene structure (100) Total length (102) At least one graphene layer (104) Distance (106)