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  • 专利标题:   Method for growing graphene thin film involves removing metal substrate from high-temperature zone to low-temperature region after closing heating power, rapid cooling, dissolving carbon, freezing, and growing monolayer graphene film.
  • 专利号:   CN104073787-A
  • 发明人:   ZHANG X, DONG G, LIU J
  • 专利权人:   JIANGNAN GRAPHENE RES INST
  • 国际专利分类:   C23C016/26, C23C016/56
  • 专利详细信息:   CN104073787-A 01 Oct 2014 C23C-016/56 201501 Pages: 7 Chinese
  • 申请详细信息:   CN104073787-A CN10308217 01 Jul 2014
  • 优先权号:   CN10308217

▎ 摘　　要

NOVELTY - Method for growing graphene thin film involves removing metal substrate from high-temperature zone to low-temperature region after closing heating power, rapidly cooling, dissolving carbon in the substrate, freezing, and growing monolayer graphene film with fewer defects. USE - Method for growing graphene thin film by chemical vapor deposition. ADVANTAGE - The method enables growth of graphene thin film with high flatness and quality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for device for growing graphene thin film.