• 专利标题:   Method for preparing MXene graphene composite structure gas sensor comprises using photoetching technology and magnetic control sputtering coating, depositing layer of metal on substrate, forming inter-digital electrode pattern metal structure, drying second target structure to obtain gas sensor.
  • 专利号:   CN113533449-A
  • 发明人:   PENG H, SUN M, CHEN W, XU M, LI Q
  • 专利权人:   UNIV GUANGXI NORMAL
  • 国际专利分类:   G01N027/12
  • 专利详细信息:   CN113533449-A 22 Oct 2021 G01N-027/12 202203 Chinese
  • 申请详细信息:   CN113533449-A CN10757468 05 Jul 2021
  • 优先权号:   CN10757468

▎ 摘  要

NOVELTY - The method comprises using photoetching technology and magnetic control sputtering coating, depositing the layer of metal on the substrate, forming inter-digital electrode pattern metal structure, using the chemical vapor deposition to grow the graphene film, transferring to the surface of the inter-digital electrode pattern metal structure by wet etching, obtaining the first target structure, using the photoetch technology to sleeve the first target structure, so that the graphene film is patterned to obtain the second target structure. preparing MXene solution, extracting supernatant of the MXene solution, extracting supernatant of the MXene solution, uniformly coating the supernatant on the second target structure, and drying the second target structure to obtain the gas sensor. USE - Method for preparing MXene graphene composite structure gas sensor. ADVANTAGE - The method: can effectively inhibit the thermal noise of the electric signal, so as to improve the signal-to-noise ratio of the sensor; has rich functional groups e.g. hydroxy, carboxy by MXene of the upper layer, which can greatly increase the gas adsorption site of the composite sensitive film; can improve the response rate and sensitivity of the gas sensor.