• 专利标题:   Attracting positively and negatively charged nanoparticles using graphene nanomesh to assemble nanoparticles, comprises creating graphene nanomesh by generating holes in graphene and passivating holes to form charged ring in nanomesh.
  • 专利号:   US2013131383-A1, US8835686-B2
  • 发明人:   AFZALIARDAKANI A, MAAROUF A, MARTYNA G J
  • 专利权人:   INT BUSINESS MACHINES CORP, INT BUSINESS MACHINES CORP
  • 国际专利分类:   B82Y030/00, B82Y040/00, C07C209/60, C07C037/66, B82B003/00
  • 专利详细信息:   US2013131383-A1 23 May 2013 C07C-209/60 201336 Pages: 11 English
  • 申请详细信息:   US2013131383-A1 US302242 22 Nov 2011
  • 优先权号:   US302242

▎ 摘  要

NOVELTY - The method comprises creating (702) a graphene nanomesh by generating holes in graphene, where each hole is of a size appropriate to a targeted charged nanoparticle, selectively passivating (704) the holes to form a positively and negatively charged ring in the graphene nanomesh by treating the graphene nanomesh with chemistry yielding a trap with an opposite charge to that of the targeted nanoparticle, and electrostatically attracting (706) the target charged nanoparticle to the oppositely charged ring to facilitate docking of the nanoparticle to the graphene nanomesh. USE - The method is useful for attracting positively and negatively charged nanoparticles using a graphene nanomesh (claimed) for assembling charged nanoparticles, where the assembly of charged nanoparticles is useful in industrial applications. ADVANTAGE - The method effectively controls final shape of the nanoparticles with high accuracy thus providing structural stability in the formed nanolayer and desired physical and/or chemical properties to the nanolayer. DETAILED DESCRIPTION - The method comprises creating (702) a graphene nanomesh by generating holes in graphene, where each of the holes is of a size appropriate to a targeted charged nanoparticle, selectively passivating (704) the holes of the graphene nanomesh to form a positively and negatively charged ring in the graphene nanomesh by treating the graphene nanomesh with chemistry yielding a trap with an opposite charge to that of the targeted nanoparticle, and electrostatically attracting (706) the target charged nanoparticle to the oppositely charged ring to facilitate docking of the charged nanoparticle to the graphene nanomesh. The method further comprises generating positively and negatively charged rings in the graphene nanomesh. Active carbon sites are left at edges of the holes during the generation of the holes. The hole has a size of 5-50 nm. The step of selectively passivating the holes of the nanomesh comprises selectively passivating the holes followed by a treatment with a base to form a ring of negative charge around a perimeter of each hole, passivating edges of the holes with a hydrogen, oxygen or hydroxide group, selectively passivating the holes with an acid to form the positive charged ring around a perimeter of each hole, passivating edges of the holes with an amine group, hydrogen containing group (HX), where X is a halo, or an alkyl halide, and controlling termination of the carbon dangling bonds. The charge is concentrated in the edge of the holes to form docking positions for the targeted nanoparticle. An INDEPENDENT CLAIM is included for a functionalized graphene nanomesh for attracting positively and negatively charged nanoparticles. DESCRIPTION OF DRAWING(S) - The figure shows a flow chart of a method for attracting charged nanoparticles. Creating a graphene nanomesh by generating holes in graphene (702) Selectively passivating the holes of the graphene nanomesh to form a positively and negatively charged ring in the graphene nanomesh (704) Electrostatically attracting the target charged nanoparticle to the oppositely charged ring. (706)