▎ 摘　　要

NOVELTY - The semiconductor structure has a heat spreader (10) that comprises a graphene grid (12) having a first major surface and a second major surface, a first copper portion (30), and a second copper portion. The graphene grid has a number of holes, which each hole has a first opening in the first major surface and a second opening in the second major surface. The first copper portion covers the first major surface of the graphene grid. The second copper portion covers the second major surface of the graphene grid. The holes of the graphene grid are filled with copper vias (24-29). USE - Semiconductor structure for packaged semiconductor device (claimed). ADVANTAGE - The heat spreader provides both lateral heat dissipation and vertical heat dissipation, thus achieving sufficient thermal dissipation. The graphene grid provides for improved lateral heat dissipation while the conductive material plated on the surfaces of the graphene grid and within the openings provides for out-of-plane heat dissipation. The combination of both the graphene and the copper of heat spreader provides for improved thermal dissipation by providing both in-plane and out-of-plane thermal dissipation. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a packaged semiconductor device; and (2) a method for forming a semiconductor device assembly. DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view of a semiconductor device assembly that includes a heat spreader. Heat spreader (10) Graphene grid (12) Copper vias (24-29) Copper portion (30) Semiconductor device (40)