▎ 摘　　要

NOVELTY - The processing method involves preparing a carbon precursor (100), a metal precursor (102), and a group VI precursor (104). The carbon precursor includes hydrocarbon gas. The metal precursor includes aluminum chloride, ferric chloride or palladium dichloride. The group VI precursor includes sulfur, oxygen or selenium. A plasma enhanced chemical vapor deposition (PECVD) process is performed with the carbon precursor, the metal precursor, and the group VI precursor to form a metal-doped graphene (108). USE - Processing method for growing metal-doped graphene (claimed). ADVANTAGE - The processing method provides growing graphene and doping heteroatom at the same time. The method of growing metal-doped graphene implements rapid process, no extra heating needed and low flame temperature. The produced metal-doped graphene is suitably applied to capacitors, catalysts or hydrogen storage materials. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a metal-doped graphene that includes a graphene and a metal element. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram of the method for growing a metal-doped graphene. Carbon precursor (100) Metal precursor (102) Group VI precursor (104) Graphene (106) Metal-doped graphene (108)