▎ 摘　　要

NOVELTY - Preparing reduced oxidation graphene film, comprises: (i) constructing graphene oxide film-clearance electrode pair by using the method (a) or (b); and (ii) applying voltage to the graphene oxide film-clearance electrode pair prepared in the step (i) by using the electronic infusion method, and repairing the graphene oxide film by electronic infusion method, where the method (a) comprises firstly fixing the clearance electrode on the solid substrate, obtaining the clearance electrode pair, and then pouring the graphene oxide solution on the solid substrate, and after volatilizing the solvent. USE - The reduced oxidation graphene film is useful in preparation of photoelectric responsive devices (in photoelectric conversion field) as clearance electrode. ADVANTAGE - The resistance of the reduced oxidation graphene film reduces 102-108 folds. DETAILED DESCRIPTION - Preparing reduced oxidation graphene film, comprises: (i) constructing graphene oxide film-clearance electrode pair by using the method (a) or (b); and (ii) applying voltage to the graphene oxide film-clearance electrode pair prepared in the step (i) by using the electronic infusion method, and repairing the graphene oxide film by electronic infusion method to obtain the reduced oxidation graphene film, where the method (a) comprises firstly fixing the clearance electrode on the solid substrate, obtaining the clearance electrode pair, and then pouring the graphene oxide solution on the solid substrate, and after volatilizing the solvent to obtain the graphene oxide film-clearance electrode pair, and the method (b) comprises firstly pouring the graphene oxide solution on the solid substrate, after volatilizing the solvent to obtain the graphene oxide film, and then fixing the clearance electrode on the graphene oxide film, obtaining the clearance electrode pair, and then obtaining the graphene oxide film-clearance electrode pair, where the graphene oxide solution is composed of graphene oxide and polar solvents. INDEPENDENT CLAIMS are also included for: (1) the reduced oxidation graphene film obtained by the above method; and (2) use of the reduced oxidation graphene film in the preparation of photoelectric responsive devices as clearance electrode.