• 专利标题:   Preparing single-layer p-type boron-doped graphene nanosheet useful in optical and electrical devices, comprises e.g. mixing the carboxylate compound, the borate compound and the carbonate compound and calcining.
  • 专利号:   CN110451487-A
  • 发明人:   CAO C, WU Y
  • 专利权人:   BEIJING INST TECHNOLOGY
  • 国际专利分类:   C01B032/184
  • 专利详细信息:   CN110451487-A 15 Nov 2019 C01B-032/184 201992 Pages: 7 Chinese
  • 申请详细信息:   CN110451487-A CN10599140 04 Jul 2019
  • 优先权号:   CN10599140

▎ 摘  要

NOVELTY - Preparing single-layer p-type boron-doped graphene nanosheet with adjustable band gap comprises (i) mixing the carboxylate compound, the borate compound and the carbonate compound in a molar ratio of 0.001:0.001:100-100:100:0.001, (ii) placing the mixture obtained by the grinding in the step (i) into a tube furnace, calcining at 200-3200 degrees C for 0 to 3000 minutes when the heating rate is set to 0-20 degrees C/minute under an inert gas atmosphere and naturally cooling to room temperature under an inert gas atmosphere after the calcination is completed, (iii) washing the product obtained in the step (ii) with 0.01-5 mol/l dilute hydrochloric acid, distilled water and ethanol to remove excess salt compound and drying the resulting product to yield a single layer of p-type boron doped graphene nanosheets. USE - The single-layer p-type boron-doped graphene nanosheet is useful in optical and electrical devices.. ADVANTAGE - The nanosheet has adjustable optical band gap.